Novel room temperature multiferroics for random access memory elements

Design Strategy and Prediction of New Room Temperature Magnetoelectric Multiferroics

Perovskite ABO3 oxides display many promising functional properties including ferroelectricity and magnetism. An ongoing challenge has been to design and synthesize materials in which ferroelectric and magnetic orderings not only coexist in a single phase above room temperature, but also are nontrivially coupled. Such a cross coupling between these different ferroic orderings could lead to many...

High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the ...

Energy Efficient Novel Design of Static Random Access Memory Memory Cell in Quantum-dot Cellular Automata Approach

This paper introduces a peculiar approach of designing Static Random Access Memory (SRAM) memory cell in Quantum-dot Cellular Automata (QCA) technique. The proposed design consists of one 3-input MG, one 5-input MG in addition to a (2×1) Multiplexer block utilizing the loop-based approach. The simulation results reveals the excellence of the proposed design. The proposed SRAM cell achieves 16% ...

Low Power March Memory Test Algorithm for Static Random Access Memories (TECHNICAL NOTE)

Memories are most important building blocks in many digital systems. As the Integrated Circuits requirements are growing, the test circuitry must grow as well. There is a need for more efficient test techniques with low power and high speed. Many Memory Built in Self-Test techniques have been proposed to test memories. Compared with combinational and sequential circuits memory testing utilizes ...

Dynamic and temperature effects in toggle magnetic random access memory